PART |
Description |
Maker |
GS84032AB-100 GS84032AB-100I GS84032AB-150 GS84032 |
100MHz 12ns 128K x 32 4Mb sync burst SRAM 150MHz 10ns 128K x 32 4Mb sync burst SRAM 166MHz 8.5ns 128K x 32 4Mb sync burst SRAM
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GSI Technology
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W24L010A W24L010A-10 W24L010A-12 W24L010A-15 W24L0 |
From old datasheet system Circular Connector; No. of Contacts:4; Series:MS27474; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:12-4 RoHS Compliant: No 128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32 128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDIP32
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WINBOND[Winbond] Winbond Electronics Corp Winbond Electronics, Corp.
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IDT70V3319S133PRFI IDT70V3399S166PRFI IDT70V3319S1 |
HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V56/128K × 18 SYNCHRONOU S双,端口静态RAM.5V的接 HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 15 ns, PQFP128
|
Integrated Device Technology, Inc.
|
K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存(5V工作),旋转引脚输出。在商用和工业温度范围操 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128K x 8 high speed static RAM, 5V operating, 20ns 128K x 8 high speed static RAM, 5V operating, 15ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
W24010A |
128K×8 High-Speed CMOS Static RAM(128K×8位高速CMOS静态RAM) 8 × 128K的高速CMOS静态RAM28K的8位高速的CMOS静态RAM)的
|
Winbond Electronics, Corp.
|
W24010AC |
128K×8 High-Speed CMOS Static RAM(128K×8位高速CMOS静态RAM) 8 × 128K的高速CMOS静态RAM28K的8位高速的CMOS静态RAM)的
|
Winbond Electronics, Corp.
|
IS61LV12816L-8T IS61LV12816L-10BLI IS61LV12816L-10 |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 10 ns, PQFP44 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 8 ns, PBGA48 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 8 ns, PDSO44 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 10 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
CY62137CVSL-70BVI CY62137CV CY62137CV25 CY62137CV2 |
Very high speed: 55 ns and 70 ns (CY62137CV25 / CY62137CV30 / CY62137CV33) 2M (128K x 16) Static RAM 32-Bit Transparent D-Type Latch with 3-State Outputs 96-LFBGA -40 to 85 2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 55 ns, PBGA48 2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PBGA48
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CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
AS7C1025B AS7C1025B-20TJIN AS7C1025B-10JC AS7C1025 |
128 x 64 pixel format, LED or EL Backlight available 128K X 8 STANDARD SRAM, 20 ns, PDSO32 High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125 128K X 8 STANDARD SRAM, 12 ns, PDSO32 5V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 20 ns, PDSO32 5V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 15 ns, PDSO32 High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-PDIP -55 to 125 High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125 SRAM - 5V Fast Asynchronous
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
EDI8L32128V12AC EDI8L32128V12AI EDI8L32128V15AC ED |
12ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM 15ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM 20ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
|
White Electronic Designs
|
CY7C1223H-166AXC CY7C1223H-166AXI CY7C1223H-133AXI |
2-Mbit (128K x 18) Pipelined DCD Sync SRAM 128K X 18 CACHE SRAM, 4 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|